Micron Technology 16JTF1G64AZ-1G6E1 8GB
Samsung M378B5773CH0-CK0 2GB

Micron Technology 16JTF1G64AZ-1G6E1 8GB vs Samsung M378B5773CH0-CK0 2GB

Overall score
star star star star star
Micron Technology 16JTF1G64AZ-1G6E1 8GB

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Overall score
star star star star star
Samsung M378B5773CH0-CK0 2GB

Samsung M378B5773CH0-CK0 2GB

Differences

  • Faster reading speed, GB/s
    14.4 left arrow 11.8
    Average value in the tests
  • Faster write speed, GB/s
    9.0 left arrow 8.9
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    33 left arrow 43
    Around -30% lower latency

Specifications

Complete list of technical specifications
Micron Technology 16JTF1G64AZ-1G6E1 8GB
Samsung M378B5773CH0-CK0 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    43 left arrow 33
  • Read speed, GB/s
    14.4 left arrow 11.8
  • Write speed, GB/s
    9.0 left arrow 8.9
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2422 left arrow 1988
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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