Micron Technology 16JTF1G64AZ-1G6E1 8GB vs Samsung M378B5773CH0-CK0 2GB

Punteggio complessivo

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Punteggio complessivo

Samsung M378B5773CH0-CK0 2GB

Samsung M378B5773CH0-CK0 2GB

Differenze Specifiche tecniche Commenti

Differenze

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Motivi da considerare
Micron Technology 16JTF1G64AZ-1G6E1 8GB

Velocità di lettura più elevata, GB/s

14.4 11.8

Valore medio nei test
Velocità di scrittura più elevata, GB/s

9.0 8.9

Valore medio nei test

Samsung M378B5773CH0-CK0 2GB

Motivi da considerare
Samsung M378B5773CH0-CK0 2GB

Al di sotto della latenza nei test PassMark, ns

33 43

Intorno -30% latenza inferiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Micron Technology 16JTF1G64AZ-1G6E1 8GB

Samsung M378B5773CH0-CK0 2GB

Caratteristiche principali

Tipo di memoria

DDR3 DDR3
Latenza in PassMark, ns

43 33
Velocità di lettura, GB/s

14.4 11.8
Velocità di scrittura, GB/s

9.0 8.9
Larghezza di banda della memoria, mbps

12800 12800

Other

Descrizione

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz 9-9-9-24 / 1600 MHz
Classifica PassMark (più sono, meglio è)

2422 1988

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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