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Nanya Technology M2X4G64CB8HG9N-DG 4GB
Inmos + 256MB

Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Inmos + 256MB

Overall score
star star star star star
Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Overall score
star star star star star
Inmos + 256MB

Inmos + 256MB

Differences Specifications Comments

Differences

Nanya Technology M2X4G64CB8HG9N-DG 4GB Reasons to consider
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Report a bug
  • Faster reading speed, GB/s
    14.9 left arrow 11.5
    Average value in the tests
  • Faster write speed, GB/s
    9.5 left arrow 9.1
    Average value in the tests
Inmos + 256MB Reasons to consider
Inmos + 256MB
Report a bug
  • Below the latency in the PassMark tests, ns
    30 left arrow 36
    Around -20% lower latency
  • Higher memory bandwidth, mbps
    16800 left arrow 12800
    Around 1.31 higher bandwidth

Specifications

Complete list of technical specifications
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Inmos + 256MB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    36 left arrow 30
  • Read speed, GB/s
    14.9 left arrow 11.5
  • Write speed, GB/s
    9.5 left arrow 9.1
  • Memory bandwidth, mbps
    12800 left arrow 16800
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow no data
  • Ranking PassMark (The more the better)
    2292 left arrow 2318

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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