Nanya Technology M2X4G64CB8HG9N-DG 4GB vs Inmos + 256MB

Punteggio complessivo

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Punteggio complessivo

Inmos + 256MB

Inmos + 256MB

Differenze Specifiche tecniche Commenti

Differenze

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Motivi da considerare
Nanya Technology M2X4G64CB8HG9N-DG 4GB

Velocità di lettura più elevata, GB/s

14.9 11.5

Valore medio nei test
Velocità di scrittura più elevata, GB/s

9.5 9.1

Valore medio nei test

Inmos + 256MB

Motivi da considerare
Inmos + 256MB

Al di sotto della latenza nei test PassMark, ns

30 36

Intorno -20% latenza inferiore
Larghezza di banda di memoria superiore, mbps

16800 12800

Intorno 1.31 larghezza di banda superiore

Specifiche tecniche

Elenco completo delle specifiche tecniche

Nanya Technology M2X4G64CB8HG9N-DG 4GB

Inmos + 256MB

Caratteristiche principali

Tipo di memoria

DDR3 DDR4
Latenza in PassMark, ns

36 30
Velocità di lettura, GB/s

14.9 11.5
Velocità di scrittura, GB/s

9.5 9.1
Larghezza di banda della memoria, mbps

12800 16800

Other

Descrizione

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
Temporizzazioni / Velocità di clock

9-9-9-24 / 1600 MHz no data
Classifica PassMark (più sono, meglio è)

2292 2318

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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