RAM comparison Samsung M378A5244CB0-CTD 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Samsung M378A5244CB0-CTD 4GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Overall score

Samsung M378A5244CB0-CTD 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M378A5244CB0-CTD 4GB

Faster reading speed, GB/s

15.8 14.2

Average value in the tests
Faster write speed, GB/s

11.8 7.4

Average value in the tests
Higher memory bandwidth, mbps

21300 19200

Around 1.11% higher bandwidth

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Complete list of technical specifications

Samsung M378A5244CB0-CTD 4GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB

Main characteristics

Other

Description

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
Timings / Clock speed

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
Ranking PassMark (The more the better)

2497 2104

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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