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Samsung M4 70T2864EH3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB

Samsung M4 70T2864EH3-CF7 1GB vs Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB

Overall score
star star star star star
Samsung M4 70T2864EH3-CF7 1GB

Samsung M4 70T2864EH3-CF7 1GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB

Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB

Differences Specifications Comments

Differences

Samsung M4 70T2864EH3-CF7 1GB Reasons to consider
Samsung M4 70T2864EH3-CF7 1GB
Report a bug
  • Faster reading speed, GB/s
    3 left arrow 3
    Average value in the tests
  • Faster write speed, GB/s
    1,643.2 left arrow 1,433.1
    Average value in the tests
  • Higher memory bandwidth, mbps
    6400 left arrow 5300
    Around 1.21% higher bandwidth
Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB
Report a bug
  • Below the latency in the PassMark tests, ns
    66 left arrow 70
    Around -6% lower latency

Specifications

Complete list of technical specifications
Samsung M4 70T2864EH3-CF7 1GB
Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB
Main characteristics
  • Memory type
    DDR2 left arrow DDR2
  • Latency in PassMark, ns
    70 left arrow 66
  • Read speed, GB/s
    3,279.9 left arrow 3,234.7
  • Write speed, GB/s
    1,643.2 left arrow 1,433.1
  • Memory bandwidth, mbps
    6400 left arrow 5300
Other
  • Description
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
  • Timings / Clock speed
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 667 MHz
  • Ranking PassMark (The more the better)
    454 left arrow 462

Samsung M4 70T2864EH3-CF7 1GB RAM comparisons

Samsung M4 70T2953EZ3-CE6 1GB
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Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB RAM comparisons

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RAM Latency Calculator
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