Samsung M4 70T2864EH3-CF7 1GB

Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB

Samsung M4 70T2864EH3-CF7 1GB vs Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB

总分

Samsung M4 70T2864EH3-CF7 1GB

Samsung M4 70T2864EH3-CF7 1GB

总分

Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB

Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB

差异规格评论

差异

Samsung M4 70T2864EH3-CF7 1GB

需要考虑的原因
Samsung M4 70T2864EH3-CF7 1GB

报告一个错误

更快的读取速度，GB/s

3 3

测试中的平均数值
更快的写入速度，GB/s

1,643.2 1,433.1

测试中的平均数值
更高的内存带宽，mbps

6400 5300

左右 1.21% 更高的带宽

Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB

报告一个错误

低于PassMark测试中的延时，ns

66 70

左右 -6% 更低的延时

规格

完整的技术规格清单

Samsung M4 70T2864EH3-CF7 1GB

Hynix Semiconductor (Hyundai Electronics) HYMP112S64CP6-Y5 1GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

70 66
读取速度，GB/s

3,279.9 3,234.7
写入速度，GB/s

1,643.2 1,433.1
内存带宽，mbps

6400 5300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 667 MHz
排名PassMark (越多越好)

454 462

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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