RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB
Comparez
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Signaler un bogue
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB
Signaler un bogue
En dessous de la latence dans les tests PassMark, ns
27
30
Autour de -11% latence réduite
Vitesse de lecture plus rapide, GB/s
10.7
8.8
Valeur moyenne dans les tests
Vitesse d'écriture plus rapide, GB/s
7.4
5.6
Valeur moyenne dans les tests
Spécifications
Liste complète des spécifications techniques
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB
Principales caractéristiques
Type de mémoire
DDR3
DDR3
Latence dans PassMark, ns
30
27
Vitesse de lecture, GB/s
8.8
10.7
Vitesse d'écriture, GB/s
5.6
7.4
Largeur de bande de la mémoire, mbps
10600
10600
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Timings / Vitesse d'horloge
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
Classement PassMark (Plus il y en a, mieux c'est)
1344
1444
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB Comparaison des RAM
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C17-8GTZRB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB Comparaison des RAM
Wilk Elektronik S.A. GR1600S364L11/8G 8GB
Kingston ACR256X64D3S1333C9 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Dernières comparaisons
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Crucial Technology BLS8G4S240FSD.16FAR 8GB
Samsung M391B5673EH1-CH9 2GB
Corsair CMK16GX4M2G4000C16 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMT32GX4M2C3000C15 16GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 9905701-004.A00G 16GB
Kingston 9905403-038.A00LF 4GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Samsung M393B5270CH0-CH9 4GB
Kingston KF2666C15S4/16G 16GB
Samsung M395T2863QZ4-CF76 1GB
Wilk Elektronik S.A. GR3200S464L22S/8G 8GB
Kingston 99U5471-030.A00LF 8GB
Corsair CMK16GX4M1B3000C15 16GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT16G4SFD824A.M16FD 16GB
SK Hynix HYMP164U64CP6-Y5 512MB
Corsair CMT32GX4M4C3466C16 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston 8ATF1G64AZ-2G1B1 8GB
SK Hynix HMT41GU7BFR8C-RD 8GB
Hewlett-Packard 7EH99AA# 16GB
SK Hynix HMA451U6AFR8N-TF 4GB
Corsair CMK32GX4M4E4133C19 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Panram International Corporation W4N2666PS-16G 16GB
Signaler un bogue
×
Bug description
Source link