RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB
Comparez
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Signaler un bogue
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB
Signaler un bogue
En dessous de la latence dans les tests PassMark, ns
27
30
Autour de -11% latence réduite
Vitesse de lecture plus rapide, GB/s
10.7
8.8
Valeur moyenne dans les tests
Vitesse d'écriture plus rapide, GB/s
7.4
5.6
Valeur moyenne dans les tests
Spécifications
Liste complète des spécifications techniques
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB
Principales caractéristiques
Type de mémoire
DDR3
DDR3
Latence dans PassMark, ns
30
27
Vitesse de lecture, GB/s
8.8
10.7
Vitesse d'écriture, GB/s
5.6
7.4
Largeur de bande de la mémoire, mbps
10600
10600
Other
Description
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Timings / Vitesse d'horloge
7-7-7-20 / 1333 MHz
7-7-7-20 / 1333 MHz
Classement PassMark (Plus il y en a, mieux c'est)
1344
1444
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB Comparaison des RAM
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4000C17-8GTZRB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT325S6CFR8C-H9 2GB Comparaison des RAM
Wilk Elektronik S.A. GR1600S364L11/8G 8GB
Kingston ACR256X64D3S1333C9 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Dernières comparaisons
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingston MSI24D4S7D8MHMH6 16GB
Corsair CMK16GX4M2A2400C14 8GB
Crucial Technology CT16G4DFRA32A.C16FN 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2P24HC4R1-BUPS 4GB
Samsung M471B5173BH0-CK0 4GB
Golden Empire CL14-16-16 D4-3000 4GB
Samsung M391B5673EH1-CH9 2GB
Terabyte Co Ltd RCX2-16G3000R 8GB
Samsung M378A1K43EB2-CWE 8GB
Micron Technology 9ASF1G72PZ-2G9E1 8GB
Elpida EBJ40UG8EFU0-GN-F 4GB
Crucial Technology BLS16G4D26BFSC.16FBD 16GB
Kingston 9905403-447.A00LF 4GB
Kingston 9905625-029.A00G 8GB
Kingston 9905403-090.A01LF 4GB
Team Group Inc. DDR4 2800 8GB
SK Hynix DDR2 800 2G 2GB
Kingston KDK8NX-MIE 16GB
Kingston KVR16N11/8-SP 8GB
Corsair CMT32GX4M2C3000C15 16GB
A-DATA Technology DOVF1B163G2G 2GB
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N
Samsung M471B5773DH0-CK0 2GB
Avant Technology W642GU42J5213N8 16GB
SpecTek Incorporated ?????????????????? 2GB
Avant Technology J642GU42J9266N2 16GB
Signaler un bogue
×
Bug description
Source link