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Samsung M3 78T2953EZ3-CE7 1GB
SK Hynix HYMP125U64CP8-S6 2GB

Samsung M3 78T2953EZ3-CE7 1GB vs SK Hynix HYMP125U64CP8-S6 2GB

Punteggio complessivo
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Samsung M3 78T2953EZ3-CE7 1GB

Samsung M3 78T2953EZ3-CE7 1GB

Punteggio complessivo
star star star star star
SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Differenze Specifiche tecniche Commenti

Differenze

Samsung M3 78T2953EZ3-CE7 1GB Motivi da considerare
Samsung M3 78T2953EZ3-CE7 1GB
Segnala un bug
  • Al di sotto della latenza nei test PassMark, ns
    56 left arrow 60
    Intorno 7% latenza inferiore
SK Hynix HYMP125U64CP8-S6 2GB Motivi da considerare
SK Hynix HYMP125U64CP8-S6 2GB
Segnala un bug
  • Velocità di lettura più elevata, GB/s
    5 left arrow 4
    Valore medio nei test
  • Velocità di scrittura più elevata, GB/s
    2,381.6 left arrow 1,760.2
    Valore medio nei test

Specifiche tecniche

Elenco completo delle specifiche tecniche
Samsung M3 78T2953EZ3-CE7 1GB
SK Hynix HYMP125U64CP8-S6 2GB
Caratteristiche principali
  • Tipo di memoria
    DDR2 left arrow DDR2
  • Latenza in PassMark, ns
    56 left arrow 60
  • Velocità di lettura, GB/s
    4,086.5 left arrow 5,082.2
  • Velocità di scrittura, GB/s
    1,760.2 left arrow 2,381.6
  • Larghezza di banda della memoria, mbps
    6400 left arrow 6400
Other
  • Descrizione
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
  • Temporizzazioni / Velocità di clock
    5-5-5-15 / 800 MHz left arrow 5-5-5-15 / 800 MHz
  • Classifica PassMark (più sono, meglio è)
    538 left arrow 925

Samsung M3 78T2953EZ3-CE7 1GB Confronto tra le RAM

Samsung M3 78T2863QZS-CF7 1GB

SK Hynix HYMP125U64CP8-S6 2GB Confronto tra le RAM

A-DATA Technology DQKD1A08 1GB
Samsung M4 70T5663QZ3-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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