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Crucial Technology CT102464BD160B 8GB
Corsair CMX8GX3M2A1600C9 4GB

Crucial Technology CT102464BD160B 8GB vs Corsair CMX8GX3M2A1600C9 4GB

总分
star star star star star
Crucial Technology CT102464BD160B 8GB

Crucial Technology CT102464BD160B 8GB

总分
star star star star star
Corsair CMX8GX3M2A1600C9 4GB

Corsair CMX8GX3M2A1600C9 4GB

差异 规格 评论

差异

Crucial Technology CT102464BD160B 8GB 需要考虑的原因
Crucial Technology CT102464BD160B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 39
    左右 28% 更低的延时
  • 更快的读取速度，GB/s
    15.3 left arrow 14.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.2 left arrow 8.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    12800 left arrow 10600
    左右 1.21% 更高的带宽
Corsair CMX8GX3M2A1600C9 4GB 需要考虑的原因
Corsair CMX8GX3M2A1600C9 4GB
报告一个错误

规格

完整的技术规格清单
Crucial Technology CT102464BD160B 8GB
Corsair CMX8GX3M2A1600C9 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    28 left arrow 39
  • 读取速度，GB/s
    15.3 left arrow 14.2
  • 写入速度，GB/s
    10.2 left arrow 8.7
  • 内存带宽，mbps
    12800 left arrow 10600
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2592 left arrow 2296

Crucial Technology CT102464BD160B 8GB RAM的比较

Kingston KVR16N11/8-SP 8GB
Apacer Technology 76.C102G.D170B 8GB

Corsair CMX8GX3M2A1600C9 4GB RAM的比较

Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3866C18-8GTZR 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

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内存RAM
Crucial Technology CT102464BD160B 8GB
Crucial Technology CT102464BD160B 8GB
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内存RAM
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内存RAM
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内存RAM
Kingston 99U5584-004.A00LF 4GB
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内存RAM
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Kingston KVR533D2N4 512MB
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G Skill Intl F4-3600C16-32GTZN 32GB
内存RAM
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Samsung M378A1K43EB2-CWE 8GB
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内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
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Kingmax Semiconductor GLLG42F-18---------- 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
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内存RAM
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内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
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