Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-3000C15-4GTZB 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3000C15-4GTZB 4GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

G Skill Intl F4-3000C15-4GTZB 4GB

G Skill Intl F4-3000C15-4GTZB 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-3000C15-4GTZB 4GB

需要考虑的原因
G Skill Intl F4-3000C15-4GTZB 4GB

报告一个错误

低于PassMark测试中的延时，ns

19 24

左右 -26% 更低的延时
更快的读取速度，GB/s

19.1 16

测试中的平均数值
更快的写入速度，GB/s

14.8 12.5

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-3000C15-4GTZB 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 19
读取速度，GB/s

16.0 19.1
写入速度，GB/s

12.5 14.8
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2925 2994

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F4-2133C15-16GFXR 16GB

G Skill Intl F4-2133C15-16GFXR 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Crucial Technology CT16G4DFRA266.C8FE 16GB

Crucial Technology CT16G4DFRA266.C8FE 16GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology CT16G4DFD8213.C16FH1 16GB

Crucial Technology CT16G4DFD8213.C16FH1 16GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

G Skill Intl F4-2666C19-8GIS 8GB

G Skill Intl F4-2666C19-8GIS 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3000C15-4GTZB 4GB

G Skill Intl F4-3000C15-4GTZB 4GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology AFSD416ES1P 16GB

Micron Technology AFSD416ES1P 16GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

A-DATA Technology AO1E34RCSV1-BD7S 16GB

A-DATA Technology AO1E34RCSV1-BD7S 16GB

G Skill Intl F3-14900CL9-4GBSR 4GB

G Skill Intl F3-14900CL9-4GBSR 4GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

Micron Technology 8ATF1G64AZ-2G3B1 8GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

Crucial Technology CT8G4DFD8213.C16FBR2 8GB

Crucial Technology CT25664AA800.M16FG 2GB

Crucial Technology CT25664AA800.M16FG 2GB

Kingston 9965604-001.D00G 16GB

Kingston 9965604-001.D00G 16GB

Kingston KVR16N11/8-SP 8GB

Kingston KVR16N11/8-SP 8GB

Crucial Technology BL16G30C15U4B.16FE 16GB

Crucial Technology BL16G30C15U4B.16FE 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

V-Color Technology Inc. TA48G36S818BN 8GB

V-Color Technology Inc. TA48G36S818BN 8GB

Samsung M471B5273DH0-CH9 4GB

Samsung M471B5273DH0-CH9 4GB

Kingston 9905712-008.A00G 16GB

Kingston 9905712-008.A00G 16GB