Kingston KVR533D2N4 512MB vs Samsung M323R2GA3BB0-CQKOD 16GB

总分

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分

Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

差异规格评论

差异

Kingston KVR533D2N4 512MB

需要考虑的原因
Kingston KVR533D2N4 512MB

报告一个错误

Samsung M323R2GA3BB0-CQKOD 16GB

需要考虑的原因
Samsung M323R2GA3BB0-CQKOD 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 75

左右 -200% 更低的延时
更快的读取速度，GB/s

13.4 1

测试中的平均数值
更快的写入速度，GB/s

12.1 1,672.1

测试中的平均数值
更高的内存带宽，mbps

19200 4200

左右 4.57 更高的带宽

规格

完整的技术规格清单

Kingston KVR533D2N4 512MB

Samsung M323R2GA3BB0-CQKOD 16GB

主要特点

存储器类型

DDR2 DDR5
PassMark中的延时，ns

75 25
读取速度，GB/s

1,943.5 13.4
写入速度，GB/s

1,672.1 12.1
内存带宽，mbps

4200 19200

Other

描述

PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
时序/时钟速度

4-4-4-12 / 533 MHz no data / 2400 MHz
排名PassMark (越多越好)

301 3419

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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