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Kingston KVR533D2N4 512MB
Samsung M323R2GA3BB0-CQKOD 16GB

Kingston KVR533D2N4 512MB vs Samsung M323R2GA3BB0-CQKOD 16GB

总分
star star star star star
Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

总分
star star star star star
Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

差异 规格 评论

差异

Kingston KVR533D2N4 512MB 需要考虑的原因
Kingston KVR533D2N4 512MB
报告一个错误
Samsung M323R2GA3BB0-CQKOD 16GB 需要考虑的原因
Samsung M323R2GA3BB0-CQKOD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 75
    左右 -200% 更低的延时
  • 更快的读取速度，GB/s
    13.4 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.1 left arrow 1,672.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 4200
    左右 4.57 更高的带宽

规格

完整的技术规格清单
Kingston KVR533D2N4 512MB
Samsung M323R2GA3BB0-CQKOD 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR5
  • PassMark中的延时，ns
    75 left arrow 25
  • 读取速度，GB/s
    1,943.5 left arrow 13.4
  • 写入速度，GB/s
    1,672.1 left arrow 12.1
  • 内存带宽，mbps
    4200 left arrow 19200
Other
  • 描述
    PC2-4200, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
  • 时序/时钟速度
    4-4-4-12 / 533 MHz left arrow no data / 2400 MHz
  • 排名PassMark (越多越好)
    301 left arrow 3419

Kingston KVR533D2N4 512MB RAM的比较

Kingston KC6844-ELG37 1GB
Crucial Technology CT4G4SFS824A.M8FE 4GB

Samsung M323R2GA3BB0-CQKOD 16GB RAM的比较

Micron Technology 36ASF2G72PZ-2G1A2 16GB
Corsair CMSX32GX4M2A3200C22 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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