Micron Technology 36ASF2G72PZ-2G1A2 16GB vs Samsung M471A1K43CB1-CRC 8GB

总分

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Micron Technology 36ASF2G72PZ-2G1A2 16GB

总分

Samsung M471A1K43CB1-CRC 8GB

Samsung M471A1K43CB1-CRC 8GB

差异规格评论

差异

Micron Technology 36ASF2G72PZ-2G1A2 16GB

需要考虑的原因
Micron Technology 36ASF2G72PZ-2G1A2 16GB

报告一个错误

Samsung M471A1K43CB1-CRC 8GB

需要考虑的原因
Samsung M471A1K43CB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 52

左右 -41% 更低的延时
更快的读取速度，GB/s

13.9 10.2

测试中的平均数值
更快的写入速度，GB/s

9.9 8.2

测试中的平均数值
更高的内存带宽，mbps

19200 17500

左右 1.1 更高的带宽

规格

完整的技术规格清单

Micron Technology 36ASF2G72PZ-2G1A2 16GB

Samsung M471A1K43CB1-CRC 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

52 37
读取速度，GB/s

10.2 13.9
写入速度，GB/s

8.2 9.9
内存带宽，mbps

17500 19200

Other

描述

PC4-17500, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2319 2389

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMA82GS6AFRFR-UH 16GB

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Crucial Technology CT4G4SFS824A.C8FE 4GB

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A-DATA Technology DQKD1A08 1GB

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Apacer Technology 78.B1GET.AU00C 4GB

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Corsair CMK16GX4M2L3200C16 8GB

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Samsung M378A1K43EB2-CWE 8GB

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Kingston 9905743-045.A00G 16GB

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Kingston HP698651-154-MCN 8GB

G Skill Intl F4-3200C16-32GTRG 32GB

G Skill Intl F4-3200C16-32GTRG 32GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

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Corsair CMK16GX4M4B3333C16 4GB

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TwinMOS 8DPT5MK8-TATP 2GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB

Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB