Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology CT51264AC800.M16FC 4GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Crucial Technology CT51264AC800.M16FC 4GB

Crucial Technology CT51264AC800.M16FC 4GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

低于PassMark测试中的延时，ns

46 63

左右 27% 更低的延时

Crucial Technology CT51264AC800.M16FC 4GB

需要考虑的原因
Crucial Technology CT51264AC800.M16FC 4GB

报告一个错误

更快的读取速度，GB/s

4 2

测试中的平均数值
更快的写入速度，GB/s

1,856.5 1,519.2

测试中的平均数值
更高的内存带宽，mbps

6400 3200

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CT51264AC800.M16FC 4GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

46 63
读取速度，GB/s

2,909.8 4,382.2
写入速度，GB/s

1,519.2 1,856.5
内存带宽，mbps

3200 6400

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

3-3-3-12 / 400 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

241 772

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung SH5724G4UNC26P2-SC 32GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

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Micron Technology 4ATF51264AZ-3G2J1 4GB

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Kingston 9905702-010.A00G 8GB

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G Skill Intl F4-4000C18-8GTZ 8GB

OCZ OCZ3T1600LV2G 2GB

OCZ OCZ3T1600LV2G 2GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Apacer Technology 78.C1GM3.C7W0B 8GB

Apacer Technology 78.C1GM3.C7W0B 8GB

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G Skill Intl F3-2666C12-8GTXD 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Crucial Technology BL16G36C16U4RL.M8FB1 16GB

Crucial Technology BL16G36C16U4RL.M8FB1 16GB