Samsung M3 78T3354BZ0-CCC 256MB vs Crucial Technology CT51264AC800.M16FC 4GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Crucial Technology CT51264AC800.M16FC 4GB

Crucial Technology CT51264AC800.M16FC 4GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

低于PassMark测试中的延时，ns

46 63

左右 27% 更低的延时

Crucial Technology CT51264AC800.M16FC 4GB

需要考虑的原因
Crucial Technology CT51264AC800.M16FC 4GB

报告一个错误

更快的读取速度，GB/s

4 2

测试中的平均数值
更快的写入速度，GB/s

1,856.5 1,519.2

测试中的平均数值
更高的内存带宽，mbps

6400 3200

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology CT51264AC800.M16FC 4GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

46 63
读取速度，GB/s

2,909.8 4,382.2
写入速度，GB/s

1,519.2 1,856.5
内存带宽，mbps

3200 6400

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

3-3-3-12 / 400 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

241 772

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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TwinMOS 8DHE3MN8-HATP 2GB

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G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Micron Technology 8ATF1G64HZ-2G6E1 8GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Mushkin MR[ABC]4U360JNNM16G 16GB

Lenovo LMKU8G68AHFHD-32A 8GB

Lenovo LMKU8G68AHFHD-32A 8GB

Corsair CMG16GX4M2E3200C16 8GB

Corsair CMG16GX4M2E3200C16 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Crucial Technology CT16G4DFD824A.M16FH 16GB

Crucial Technology CT16G4DFD824A.M16FH 16GB