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Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
比较
Samsung M395T2863QZ4-CF76 1GB vs Crucial Technology BLS4G4D240FSB.8FARG 4GB
总分
Samsung M395T2863QZ4-CF76 1GB
总分
Crucial Technology BLS4G4D240FSB.8FARG 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB
报告一个错误
更快的读取速度,GB/s
3
16.1
测试中的平均数值
更快的写入速度,GB/s
2,404.5
12.3
测试中的平均数值
需要考虑的原因
Crucial Technology BLS4G4D240FSB.8FARG 4GB
报告一个错误
低于PassMark测试中的延时,ns
32
104
左右 -225% 更低的延时
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
104
32
读取速度,GB/s
3,192.0
16.1
写入速度,GB/s
2,404.5
12.3
内存带宽,mbps
6400
19200
Other
描述
PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度
no data
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
786
2902
Samsung M395T2863QZ4-CF76 1GB RAM的比较
takeMS International AG TMS2GS264D081805AV 2GB
Micron Technology 8HTF12864HDZ-800E1 1GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M395T2863QZ4-CF76 1GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
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Ramaxel Technology RMSA3260MH78HAF-2666 8GB
Ramaxel Technology RMT3160ED58E9W1600 4GB
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Micron Technology 8ATF1G64HZ-3G2J1 8GB
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Samsung M378A1K43BB1-CTD 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-4266C19-8GTZR 8GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CMD64GX4M4B3466C16 16GB
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Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
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Corsair CM4B16G1J2400A16K2-O 16GB
Kingston HP669238-071-HYC 4GB
G Skill Intl F4-2400C15Z8GNT 8GB
Corsair CML16GX3M2A1600C10 8GB
Corsair CMW64GX4M2D3000C16 32GB
报告一个错误
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