Samsung M395T2863QZ4-CF76 1GB vs Samsung M471A1K43BB0-CPB 8GB

总分

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

总分

Samsung M471A1K43BB0-CPB 8GB

Samsung M471A1K43BB0-CPB 8GB

差异规格评论

差异

Samsung M395T2863QZ4-CF76 1GB

需要考虑的原因
Samsung M395T2863QZ4-CF76 1GB

报告一个错误

更快的读取速度，GB/s

3 13.4

测试中的平均数值

Samsung M471A1K43BB0-CPB 8GB

需要考虑的原因
Samsung M471A1K43BB0-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 104

左右 -174% 更低的延时
更快的写入速度，GB/s

9.3 2,404.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M395T2863QZ4-CF76 1GB

Samsung M471A1K43BB0-CPB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

104 38
读取速度，GB/s

3,192.0 13.4
写入速度，GB/s

2,404.5 9.3
内存带宽，mbps

6400 17000

Other

描述

PC-6400, PS1: 1.5V, PS2: 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

no data 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

786 2298

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD AE34G2139U2 4GB

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Kingston 99U5584-001.A00LF 4GB

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Micron Technology 18ASF2G72AZ-2G1B1 16GB

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A-DATA Technology VDQVE1B16 2GB

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Corsair CMD32GX4M4B2800C14 8GB

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Essencore Limited IM48GS88N26-JJJHA0 8GB

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Micron Technology 16JTF25664AZ-1G4F1 2GB

Crucial Technology BLS16G4D26BFSC.16FBD 16GB

Crucial Technology BLS16G4D26BFSC.16FBD 16GB

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Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB

Micron Technology 72ASS8G72LZ-2G6D2 64GB