Samsung M395T5160QZ4-CE66 2GB vs Micron Technology 18ASF2G72PDZ-2G3B1 16GB

总分

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

总分

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

差异规格评论

差异

Samsung M395T5160QZ4-CE66 2GB

需要考虑的原因
Samsung M395T5160QZ4-CE66 2GB

报告一个错误

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

需要考虑的原因
Micron Technology 18ASF2G72PDZ-2G3B1 16GB

报告一个错误

低于PassMark测试中的延时，ns

57 75

左右 -32% 更低的延时
更快的读取速度，GB/s

9.5 2

测试中的平均数值
更快的写入速度，GB/s

7.4 2,072.7

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M395T5160QZ4-CE66 2GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

75 57
读取速度，GB/s

2,730.3 9.5
写入速度，GB/s

2,072.7 7.4
内存带宽，mbps

5300 19200

Other

描述

PC-5300, PS1: 1.5V, PS2: 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

no data 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

858 2213

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M395T5160QZ4-CE66 2GB

Samsung M395T5160QZ4-CE66 2GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Corsair CM4X16GE2133C15S2 16GB

Corsair CM4X16GE2133C15S2 16GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

SK Hynix HMAA4GS6CJR8N-XN 32GB

SK Hynix HMAA4GS6CJR8N-XN 32GB

G Skill Intl F3-2133C9-4GAB 4GB

G Skill Intl F3-2133C9-4GAB 4GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Avant Technology J642GU42J9266N4 16GB

Avant Technology J642GU42J9266N4 16GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Gold Key Technology Co Ltd NMGD480E82-3200D 8GB

Gold Key Technology Co Ltd NMGD480E82-3200D 8GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-3600C16-8GTRGC 8GB

G Skill Intl F4-3600C16-8GTRGC 8GB

Samsung M393B1K70CH0-YH9 8GB

Samsung M393B1K70CH0-YH9 8GB

Kingston 99U5663-006.A00G 16GB

Kingston 99U5663-006.A00G 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

G Skill Intl F4-3200C15-16GTZSK 16GB

G Skill Intl F4-3200C15-16GTZSK 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-3600C16-16GTRSC 16GB

G Skill Intl F4-3600C16-16GTRSC 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Lexar Co Limited LD4AS016G-H2666G 16GB

Lexar Co Limited LD4AS016G-H2666G 16GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

G Skill Intl F4-3000C14-16GVRD 16GB

G Skill Intl F4-3000C14-16GVRD 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Samsung M471A2K43CB1-CRCR 16GB

Samsung M471A2K43CB1-CRCR 16GB