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Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-3400C16-16GVK 16GB

Samsung M4 70T2864QZ3-CF7 1GB vs G Skill Intl F4-3400C16-16GVK 16GB

总分
star star star star star
Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

总分
star star star star star
G Skill Intl F4-3400C16-16GVK 16GB

G Skill Intl F4-3400C16-16GVK 16GB

差异 规格 评论

差异

Samsung M4 70T2864QZ3-CF7 1GB 需要考虑的原因
Samsung M4 70T2864QZ3-CF7 1GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,201.1 left arrow 15.0
    测试中的平均数值
G Skill Intl F4-3400C16-16GVK 16GB 需要考虑的原因
G Skill Intl F4-3400C16-16GVK 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 74
    左右 -185% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-3400C16-16GVK 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    74 left arrow 26
  • 读取速度，GB/s
    4,178.4 left arrow 18.7
  • 写入速度，GB/s
    2,201.1 left arrow 15.0
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    508 left arrow 3834

Samsung M4 70T2864QZ3-CF7 1GB RAM的比较

Samsung M4 70T2864QZ3-CE6 1GB
Corsair CMD8GX4M2B4000C19 4GB

G Skill Intl F4-3400C16-16GVK 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Kingston XRMWRN-MIE2 16GB
内存RAM
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内存RAM
Avant Technology F641GU67F9333G 8GB
Avant Technology F641GU67F9333G 8GB
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Crucial Technology CT16G4DFRA32A.C8FB 16GB
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Samsung M3 93T5750CZA-CE6 2GB
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