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takeMS International AG TMS2GB264D083805EV 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
比较
takeMS International AG TMS2GB264D083805EV 2GB vs Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
总分
takeMS International AG TMS2GB264D083805EV 2GB
总分
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
差异
规格
评论
差异
需要考虑的原因
takeMS International AG TMS2GB264D083805EV 2GB
报告一个错误
更快的读取速度,GB/s
3
18.7
测试中的平均数值
需要考虑的原因
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
报告一个错误
低于PassMark测试中的延时,ns
27
50
左右 -85% 更低的延时
更快的写入速度,GB/s
17.8
1,457.4
测试中的平均数值
更高的内存带宽,mbps
25600
6400
左右 4 更高的带宽
规格
完整的技术规格清单
takeMS International AG TMS2GB264D083805EV 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
50
27
读取速度,GB/s
3,757.3
18.7
写入速度,GB/s
1,457.4
17.8
内存带宽,mbps
6400
25600
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
PC4-25600, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20 21 22
时序/时钟速度
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
557
3963
takeMS International AG TMS2GB264D083805EV 2GB RAM的比较
Kingston 99P5316-014.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-2800C14-16GTZ 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BL8G26C16U4B.8FD 8GB
takeMS International AG TMS2GB264D083805EV 2GB
Thermaltake Technology Co Ltd R009D408GX2-4600C19A 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Advantech Co Ltd SQR-SD4N8G2K6SNBCB 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Crucial Technology CT8G4SFS632A 8GB
Crucial Technology BLS4G4D240FSE.M8FADM 4GB
Panram International Corporation PUD43000C168G2NJR 8GB
PNY Electronics PNY 2GB
Kingston KHX3200C16D4/4GX 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Avant Technology J644GU44J1293NF 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4400C17-8GVK 8GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-2933C14-8GFX 8GB
G Skill Intl F5-5600J4040C16G 16GB
Samsung M378A2K43CB1-CRC 16GB
A-DATA Technology DDR2 800G 2GB
Samsung M378A2G43MX3-CTD 16GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Apacer Technology 78.C1GMM.DFW0C 8GB
报告一个错误
×
Bug description
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