Crucial Technology CT51264BD1339.M16F 4GB
Samsung M378B5673GB0-CH9 2GB

Crucial Technology CT51264BD1339.M16F 4GB vs Samsung M378B5673GB0-CH9 2GB

Overall score
star star star star star
Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Overall score
star star star star star
Samsung M378B5673GB0-CH9 2GB

Samsung M378B5673GB0-CH9 2GB

Differences

  • Faster write speed, GB/s
    8.6 left arrow 8.4
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    24 left arrow 25
    Around -4% lower latency
  • Faster reading speed, GB/s
    12.9 left arrow 12.1
    Average value in the tests

Specifications

Complete list of technical specifications
Crucial Technology CT51264BD1339.M16F 4GB
Samsung M378B5673GB0-CH9 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    25 left arrow 24
  • Read speed, GB/s
    12.1 left arrow 12.9
  • Write speed, GB/s
    8.6 left arrow 8.4
  • Memory bandwidth, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    2045 left arrow 1788
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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