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Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
Samsung M471B5273CH0-CH9 4GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB vs Samsung M471B5273CH0-CH9 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
Overall score
Samsung M471B5273CH0-CH9 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
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Below the latency in the PassMark tests, ns
36
48
Around 25% lower latency
Faster reading speed, GB/s
9.3
8.9
Average value in the tests
Faster write speed, GB/s
7.0
5.9
Average value in the tests
Higher memory bandwidth, mbps
19200
10600
Around 1.81% higher bandwidth
Reasons to consider
Samsung M471B5273CH0-CH9 4GB
Report a bug
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
Samsung M471B5273CH0-CH9 4GB
Main characteristics
Memory type
DDR4
DDR3
Latency in PassMark, ns
36
48
Read speed, GB/s
9.3
8.9
Write speed, GB/s
7.0
5.9
Memory bandwidth, mbps
19200
10600
Other
Description
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
Timings / Clock speed
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
1891
1420
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2
CAS Latency (CL) *
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Absolute Latency
0 ns
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