Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
Samsung M471B5273CH0-CH9 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB vs Samsung M471B5273CH0-CH9 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB

总分
star star star star star
Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

差异

  • 低于PassMark测试中的延时,ns
    36 left arrow 48
    左右 25% 更低的延时
  • 更快的读取速度,GB/s
    9.3 left arrow 8.9
    测试中的平均数值
  • 更快的写入速度,GB/s
    7.0 left arrow 5.9
    测试中的平均数值
  • 更高的内存带宽,mbps
    19200 left arrow 10600
    左右 1.81% 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-UH 4GB
Samsung M471B5273CH0-CH9 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR3
  • PassMark中的延时,ns
    36 left arrow 48
  • 读取速度,GB/s
    9.3 left arrow 8.9
  • 写入速度,GB/s
    7.0 left arrow 5.9
  • 内存带宽,mbps
    19200 left arrow 10600
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1891 left arrow 1420
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最新比较