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Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Kingston HX316C10F/8 8GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB vs Kingston HX316C10F/8 8GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB

Overall score
star star star star star
Kingston HX316C10F/8 8GB

Kingston HX316C10F/8 8GB

Differences Specifications Comments

Differences

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    27 left arrow 36
    Around 25% lower latency
Kingston HX316C10F/8 8GB Reasons to consider
Kingston HX316C10F/8 8GB
Report a bug
  • Faster reading speed, GB/s
    14.7 left arrow 13.2
    Average value in the tests
  • Faster write speed, GB/s
    9.2 left arrow 8.9
    Average value in the tests

Specifications

Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB
Kingston HX316C10F/8 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    27 left arrow 36
  • Read speed, GB/s
    13.2 left arrow 14.7
  • Write speed, GB/s
    8.9 left arrow 9.2
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2245 left arrow 2585

Hynix Semiconductor (Hyundai Electronics) HMT351U6EFR8C-PB 4GB RAM comparisons

Samsung M378B5173QH0-CK0 4GB
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Kingston HX316C10F/8 8GB RAM comparisons

Smart Modular SH5641G8FJ8NWRNSQG 8GB
Avant Technology F6451U66G1600G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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