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Micron Technology 16ATF1G64AZ-2G1B1 8GB
Samsung M378A5143EB1-CPB 4GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB vs Samsung M378A5143EB1-CPB 4GB

Overall score
star star star star star
Micron Technology 16ATF1G64AZ-2G1B1 8GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

Overall score
star star star star star
Samsung M378A5143EB1-CPB 4GB

Samsung M378A5143EB1-CPB 4GB

Differences Specifications Comments

Differences

Micron Technology 16ATF1G64AZ-2G1B1 8GB Reasons to consider
Micron Technology 16ATF1G64AZ-2G1B1 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    37 left arrow 38
    Around 3% lower latency
  • Faster reading speed, GB/s
    14.7 left arrow 14.6
    Average value in the tests
Samsung M378A5143EB1-CPB 4GB Reasons to consider
Samsung M378A5143EB1-CPB 4GB
Report a bug
  • Faster write speed, GB/s
    10.8 left arrow 10.6
    Average value in the tests

Specifications

Complete list of technical specifications
Micron Technology 16ATF1G64AZ-2G1B1 8GB
Samsung M378A5143EB1-CPB 4GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    37 left arrow 38
  • Read speed, GB/s
    14.7 left arrow 14.6
  • Write speed, GB/s
    10.6 left arrow 10.8
  • Memory bandwidth, mbps
    17000 left arrow 17000
Other
  • Description
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • Timings / Clock speed
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    2592 left arrow 2298

Micron Technology 16ATF1G64AZ-2G1B1 8GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-156.A00LF 2GB

Samsung M378A5143EB1-CPB 4GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HYMP112U64CP8-S5 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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