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Micron Technology 16ATF1G64AZ-2G1B1 8GB
Samsung M378A5143EB1-CPB 4GB
Compare
Micron Technology 16ATF1G64AZ-2G1B1 8GB vs Samsung M378A5143EB1-CPB 4GB
Overall score
Micron Technology 16ATF1G64AZ-2G1B1 8GB
Overall score
Samsung M378A5143EB1-CPB 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 16ATF1G64AZ-2G1B1 8GB
Report a bug
Below the latency in the PassMark tests, ns
37
38
Around 3% lower latency
Faster reading speed, GB/s
14.7
14.6
Average value in the tests
Reasons to consider
Samsung M378A5143EB1-CPB 4GB
Report a bug
Faster write speed, GB/s
10.8
10.6
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 16ATF1G64AZ-2G1B1 8GB
Samsung M378A5143EB1-CPB 4GB
Main characteristics
Memory type
DDR4
DDR4
Latency in PassMark, ns
37
38
Read speed, GB/s
14.7
14.6
Write speed, GB/s
10.6
10.8
Memory bandwidth, mbps
17000
17000
Other
Description
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
Timings / Clock speed
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
Ranking PassMark (The more the better)
2592
2298
Micron Technology 16ATF1G64AZ-2G1B1 8GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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