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Micron Technology 4ATF51264HZ-2G6E1 4GB
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
Compare
Micron Technology 4ATF51264HZ-2G6E1 4GB vs Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
Overall score
Micron Technology 4ATF51264HZ-2G6E1 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 4ATF51264HZ-2G6E1 4GB
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Below the latency in the PassMark tests, ns
38
67
Around 43% lower latency
Faster reading speed, GB/s
14.2
6.2
Average value in the tests
Faster write speed, GB/s
10.3
3.4
Average value in the tests
Higher memory bandwidth, mbps
21300
12800
Around 1.66% higher bandwidth
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
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Specifications
Complete list of technical specifications
Micron Technology 4ATF51264HZ-2G6E1 4GB
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
Main characteristics
Memory type
DDR4
DDR3
Latency in PassMark, ns
38
67
Read speed, GB/s
14.2
6.2
Write speed, GB/s
10.3
3.4
Memory bandwidth, mbps
21300
12800
Other
Description
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
Timings / Clock speed
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
2148
1076
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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