Micron Technology 4ATF51264HZ-2G6E1 4GB
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

Micron Technology 4ATF51264HZ-2G6E1 4GB vs Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

Overall score
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Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

Differences

  • Below the latency in the PassMark tests, ns
    38 left arrow 67
    Around 43% lower latency
  • Faster reading speed, GB/s
    14.2 left arrow 6.2
    Average value in the tests
  • Faster write speed, GB/s
    10.3 left arrow 3.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    21300 left arrow 12800
    Around 1.66% higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 4ATF51264HZ-2G6E1 4GB
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR3
  • Latency in PassMark, ns
    38 left arrow 67
  • Read speed, GB/s
    14.2 left arrow 6.2
  • Write speed, GB/s
    10.3 left arrow 3.4
  • Memory bandwidth, mbps
    21300 left arrow 12800
Other
  • Description
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 left arrow PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
  • Timings / Clock speed
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2148 left arrow 1076
RAM Latency Calculator
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