RAM comparison Micron Technology 4ATF51264HZ-2G6E1 4GB vs Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

Micron Technology 4ATF51264HZ-2G6E1 4GB vs Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

Overall score

Micron Technology 4ATF51264HZ-2G6E1 4GB

Overall score

Differences Specifications Comments

Reasons to consider
Micron Technology 4ATF51264HZ-2G6E1 4GB

Below the latency in the PassMark tests, ns

38 67

Around 43% lower latency
Faster reading speed, GB/s

14.2 6.2

Average value in the tests
Faster write speed, GB/s

10.3 3.4

Average value in the tests
Higher memory bandwidth, mbps

21300 12800

Around 1.66% higher bandwidth

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

Complete list of technical specifications

Micron Technology 4ATF51264HZ-2G6E1 4GB

Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

Main characteristics

Other

Description

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
Timings / Clock speed

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)

2148 1076

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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