Micron Technology 4ATF51264HZ-2G6E1 4GB

Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

Micron Technology 4ATF51264HZ-2G6E1 4GB vs Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

总分

Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

总分

Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

差异规格评论

差异

Micron Technology 4ATF51264HZ-2G6E1 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G6E1 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 67

左右 43% 更低的延时
更快的读取速度，GB/s

14.2 6.2

测试中的平均数值
更快的写入速度，GB/s

10.3 3.4

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66% 更高的带宽

Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

报告一个错误

规格

完整的技术规格清单

Micron Technology 4ATF51264HZ-2G6E1 4GB

Hynix Semiconductor (Hyundai Electronics) QUM3U-8G1600C11 8GB

主要特点

存储器类型

DDR4 DDR3
PassMark中的延时，ns

38 67
读取速度，GB/s

14.2 6.2
写入速度，GB/s

10.3 3.4
内存带宽，mbps

21300 12800

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 9-9-9-24 / 1600 MHz
排名PassMark (越多越好)

2148 1076

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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