Micron Technology 8JTF51264AZ-1G6E1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Micron Technology 8JTF51264AZ-1G6E1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Overall score
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Micron Technology 8JTF51264AZ-1G6E1 4GB

Micron Technology 8JTF51264AZ-1G6E1 4GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB

Differences

  • Faster reading speed, GB/s
    13.7 left arrow 12.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    12800 left arrow 10600
    Around 1.21% higher bandwidth
  • Below the latency in the PassMark tests, ns
    26 left arrow 42
    Around -62% lower latency
  • Faster write speed, GB/s
    8.3 left arrow 8.1
    Average value in the tests

Specifications

Complete list of technical specifications
Micron Technology 8JTF51264AZ-1G6E1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    42 left arrow 26
  • Read speed, GB/s
    13.7 left arrow 12.8
  • Write speed, GB/s
    8.1 left arrow 8.3
  • Memory bandwidth, mbps
    12800 left arrow 10600
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    2173 left arrow 2186
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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