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Micron Technology 8JTF51264AZ-1G6E1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Compare
Micron Technology 8JTF51264AZ-1G6E1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Overall score
Micron Technology 8JTF51264AZ-1G6E1 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8JTF51264AZ-1G6E1 4GB
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Faster reading speed, GB/s
13.7
12.8
Average value in the tests
Higher memory bandwidth, mbps
12800
10600
Around 1.21% higher bandwidth
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
42
Around -62% lower latency
Faster write speed, GB/s
8.3
8.1
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8JTF51264AZ-1G6E1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
42
26
Read speed, GB/s
13.7
12.8
Write speed, GB/s
8.1
8.3
Memory bandwidth, mbps
12800
10600
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10
Timings / Clock speed
9-9-9-24 / 1600 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
2173
2186
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
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RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
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Absolute Latency
0 ns
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