RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Micron Technology 8JTF51264AZ-1G6E1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Compare
Micron Technology 8JTF51264AZ-1G6E1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Overall score
Micron Technology 8JTF51264AZ-1G6E1 4GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Differences
Specifications
Comments
Differences
Reasons to consider
Micron Technology 8JTF51264AZ-1G6E1 4GB
Report a bug
Faster reading speed, GB/s
13.7
12.8
Average value in the tests
Higher memory bandwidth, mbps
12800
10600
Around 1.21% higher bandwidth
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Report a bug
Below the latency in the PassMark tests, ns
26
42
Around -62% lower latency
Faster write speed, GB/s
8.3
8.1
Average value in the tests
Specifications
Complete list of technical specifications
Micron Technology 8JTF51264AZ-1G6E1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
42
26
Read speed, GB/s
13.7
12.8
Write speed, GB/s
8.1
8.3
Memory bandwidth, mbps
12800
10600
Other
Description
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11
PC3-10600, 1.5V, CAS Supported: 6 7 8 9 10
Timings / Clock speed
9-9-9-24 / 1600 MHz
7-7-7-20 / 1333 MHz
Ranking PassMark (The more the better)
2173
2186
Micron Technology 8JTF51264AZ-1G6E1 4GB RAM comparisons
Samsung M378B5173CB0-CK0 4GB
Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8A-PB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C-H9 4GB RAM comparisons
Samsung M378B5273DH0-CH9 4GB
SK Hynix HMT41GS6BFR8A-PB 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Crucial Technology BL16G32C16U4R.M16FE 16GB
Samsung M378B5773DH0-CH9 2GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
Micron Technology 8JTF51264AZ-1G6E1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT351U6CFR8C
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT8G4SFS8266.C8FJ 8GB
Kingston 9905458-009.A00LF 2GB
Kingston KF556C40-16 16GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Eudar Technology Inc. 8GXMP2666CL16 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9905678-058.A00G 4GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology BLS8G4D240FSC.16FBD2 8GB
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Kingston 99U5471-052.A00LF 8GB
Shanghai Kuxin Microelectronics Ltd NMSO480E82-2400 8GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Crucial Technology CT8G4DFD8213.16FA11 8GB
Kingston ASU16D3LS1KFG/4G 4GB
Ramaxel Technology RMSA3260MH78H8H-2666 8GB
Kingston 9965433-034.A00LF 4GB
Corsair CMW128GX4M8X3600C18 16GB
Samsung 1600 CL10 Series 8GB
Corsair CMK128GX4M8A2400C14 16GB
Report a bug
×
Bug description
Source link