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Micron Technology 8JTF51264AZ-1G6E1 4GB
Samsung M378B5173CB0-CK0 4GB

Micron Technology 8JTF51264AZ-1G6E1 4GB vs Samsung M378B5173CB0-CK0 4GB

Overall score
star star star star star
Micron Technology 8JTF51264AZ-1G6E1 4GB

Micron Technology 8JTF51264AZ-1G6E1 4GB

Overall score
star star star star star
Samsung M378B5173CB0-CK0 4GB

Samsung M378B5173CB0-CK0 4GB

Differences Specifications Comments

Differences

Micron Technology 8JTF51264AZ-1G6E1 4GB Reasons to consider
Micron Technology 8JTF51264AZ-1G6E1 4GB
Report a bug
  • Faster reading speed, GB/s
    13.7 left arrow 13.6
    Average value in the tests
Samsung M378B5173CB0-CK0 4GB Reasons to consider
Samsung M378B5173CB0-CK0 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    41 left arrow 42
    Around -2% lower latency

Specifications

Complete list of technical specifications
Micron Technology 8JTF51264AZ-1G6E1 4GB
Samsung M378B5173CB0-CK0 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    42 left arrow 41
  • Read speed, GB/s
    13.7 left arrow 13.6
  • Write speed, GB/s
    8.1 left arrow 8.1
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2173 left arrow 2229

Micron Technology 8JTF51264AZ-1G6E1 4GB RAM comparisons

Hynix Semiconductor (Hyundai Electronics) HMT451U6BFR8A-PB 4GB

Samsung M378B5173CB0-CK0 4GB RAM comparisons

Samsung M378B5173DB0-CK0 4GB
Kingmax Semiconductor FLFF65F-C8KL9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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