Micron Technology 8KTF51264HZ-1G9P1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

Micron Technology 8KTF51264HZ-1G9P1 4GB vs Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

Overall score
star star star star star
Micron Technology 8KTF51264HZ-1G9P1 4GB

Micron Technology 8KTF51264HZ-1G9P1 4GB

Overall score
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB

Differences

  • Faster reading speed, GB/s
    13.4 left arrow 10.5
    Average value in the tests
  • Faster write speed, GB/s
    9.2 left arrow 8.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    14900 left arrow 10600
    Around 1.41% higher bandwidth
  • Below the latency in the PassMark tests, ns
    28 left arrow 39
    Around -39% lower latency

Specifications

Complete list of technical specifications
Micron Technology 8KTF51264HZ-1G9P1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT125S6BFR8C-H9 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    39 left arrow 28
  • Read speed, GB/s
    13.4 left arrow 10.5
  • Write speed, GB/s
    9.2 left arrow 8.4
  • Memory bandwidth, mbps
    14900 left arrow 10600
Other
  • Description
    PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13 left arrow PC3-10600, 1.5V, CAS Supported: 6 7 8 9
  • Timings / Clock speed
    9-10-9-28 / 1866 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    2509 left arrow 1570
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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