Samsung M323R2GA3BB0-CQKOD 16GB
Micron Technology 9ASF51272PZ-2G1AX 4GB

Samsung M323R2GA3BB0-CQKOD 16GB vs Micron Technology 9ASF51272PZ-2G1AX 4GB

Overall score
star star star star star
Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

Overall score
star star star star star
Micron Technology 9ASF51272PZ-2G1AX 4GB

Micron Technology 9ASF51272PZ-2G1AX 4GB

Differences

  • Below the latency in the PassMark tests, ns
    25 left arrow 39
    Around 36% lower latency
  • Faster reading speed, GB/s
    13.4 left arrow 7.7
    Average value in the tests
  • Faster write speed, GB/s
    12.1 left arrow 6.8
    Average value in the tests
  • Higher memory bandwidth, mbps
    19200 left arrow 17000
    Around 1.13% higher bandwidth

Specifications

Complete list of technical specifications
Samsung M323R2GA3BB0-CQKOD 16GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Main characteristics
  • Memory type
    DDR5 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 39
  • Read speed, GB/s
    13.4 left arrow 7.7
  • Write speed, GB/s
    12.1 left arrow 6.8
  • Memory bandwidth, mbps
    19200 left arrow 17000
Other
  • Description
    PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • Timings / Clock speed
    no data / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • Ranking PassMark (The more the better)
    3419 left arrow 1768
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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