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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Compare
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Overall score
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Report a bug
Reasons to consider
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Report a bug
Faster reading speed, GB/s
18.1
10.9
Average value in the tests
Faster write speed, GB/s
15.6
7.1
Average value in the tests
Higher memory bandwidth, mbps
21300
8500
Around 2.51 higher bandwidth
Specifications
Complete list of technical specifications
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Main characteristics
Memory type
DDR3
DDR4
Latency in PassMark, ns
28
28
Read speed, GB/s
10.9
18.1
Write speed, GB/s
7.1
15.6
Memory bandwidth, mbps
8500
21300
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Clock speed
7-7-7-20 / 1066 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (The more the better)
1668
3693
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB RAM comparisons
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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Absolute Latency
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RAM 2
CAS Latency (CL) *
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Absolute Latency
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