RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
À propos du site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Comparez
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Note globale
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Note globale
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Différences
Spécifications
Commentaires
Différences
Raisons de considérer
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Signaler un bogue
Raisons de considérer
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Signaler un bogue
Vitesse de lecture plus rapide, GB/s
18.1
10.9
Valeur moyenne dans les tests
Vitesse d'écriture plus rapide, GB/s
15.6
7.1
Valeur moyenne dans les tests
Bande passante mémoire plus élevée, mbps
21300
8500
Autour de 2.51 bande passante supérieure
Spécifications
Liste complète des spécifications techniques
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Principales caractéristiques
Type de mémoire
DDR3
DDR4
Latence dans PassMark, ns
28
28
Vitesse de lecture, GB/s
10.9
18.1
Vitesse d'écriture, GB/s
7.1
15.6
Largeur de bande de la mémoire, mbps
8500
21300
Other
Description
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Timings / Vitesse d'horloge
7-7-7-20 / 1066 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Classement PassMark (Plus il y en a, mieux c'est)
1668
3693
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB Comparaison des RAM
SK Hynix HMT351S6AFR8C-G7 4GB
Corsair CMK16GX4M4B3200C16 4GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB Comparaison des RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Dernières comparaisons
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C
Chun Well Technology Holding Limited MD4U1636181DCW 16G
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT8G4DFS832A.M8FR 8GB
Kingston KHX2133C11D3/4GX 4GB
Corsair CMK16GX4M2K4400C19 8GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-2400C15Z8GNT 8GB
Kingston 99U5595-005.A00LF 2GB
Kingston HP28D4S7D8HA-16X 16GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMY16GX3M2A1866C 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Kingston KHX2400C14S4/16G 16GB
Essencore Limited KD48GU88C-26N1600 8GB
Kingston 9905678-138.A00G 8GB
Samsung M393B2G70BH0-CK0 16GB
Kingston XJV223-MIE-NX 16GB
G Skill Intl F4-3600C16-8GTZKK 8GB
Kingston 9905663-030.A00G 16GB
SK Hynix HMA82GS6MFR8N-TF 16GB
Samsung M471A1K43DB1-CTD 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Samsung M471A2K43DB1-CTD 16GB
Kingston 99U5471-056.A00LF 8GB
Hewlett-Packard 7EH67AA# 8GB
Samsung M471B1G73QH0-YK0 8GB
Transcend Information TS2GSH64V4B 16GB
Signaler un bogue
×
Bug description
Source link