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Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Comparar
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB vs Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Pontuação geral
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Pontuação geral
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Diferenças
Especificações
Comentários
Diferenças
Razões a considerar
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Relatar um erro
Razões a considerar
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
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Velocidade de leitura mais rápida, GB/s
18.1
10.9
Valor médio nos testes
Velocidade de escrita mais rápida, GB/s
15.6
7.1
Valor médio nos testes
Maior largura de banda de memória, mbps
21300
8500
Por volta de 2.51 maior largura de banda
Especificações
Lista completa de especificações técnicas
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB
Características principais
Tipo de memória
DDR3
DDR4
Latência em PassMark, ns
28
28
Velocidade de leitura, GB/s
10.9
18.1
Velocidade de escrita, GB/s
7.1
15.6
Largura de banda de memória, mbps
8500
21300
Other
Descrição
PC3-8500, 1.5V, CAS Supported: 6 7 8
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
Tempos / Velocidade do relógio
7-7-7-20 / 1066 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
Ranking PassMark (Quanto mais, melhor)
1668
3693
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C-G7 2GB Comparações de RAM
SK Hynix HMT351S6AFR8C-G7 4GB
Corsair CMK16GX4M4B3200C16 4GB
Chun Well Technology Holding Limited MD4U1636181DCW 16GB Comparações de RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Últimas comparações
Hynix Semiconductor (Hyundai Electronics) HMT125S6AFP8C
Chun Well Technology Holding Limited MD4U1636181DCW 16G
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-2800C18-8GRS 8GB
Kingston 99U5469-045.A00LF 4GB
Kingston HP26D4U9D8HC-16X 16GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-2133C15-4GRB 4GB
Samsung M393B1K70CH0-YH9 8GB
Crucial Technology BL8G32C16U4W.8FE 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Smart Modular SF4641G8CKHIWDFSEG 8GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Samsung M378B1G73DB0-CK0 8GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology BLS8G4D240FSB.16FBR2 8GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston KF3200C16D4/8GX 8GB
Kingston KHX2133C11D3/4GX 4GB
Kingston 99U5700-010.A00G 8GB
Kingston 9905471-001.A01LF 2GB
Transcend Information JM3200HLB-8G 8GB
Samsung M471B5273DH0-CK0 4GB
SK Hynix HMA81GU6DJR8N-VK 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3600C14-8GVKA 8GB
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