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Micron Technology 16KTF1G64HZ-1G9E2 8GB
Samsung M378A1G44AB0-CWE 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB vs Samsung M378A1G44AB0-CWE 8GB

Overall score
star star star star star
Micron Technology 16KTF1G64HZ-1G9E2 8GB

Micron Technology 16KTF1G64HZ-1G9E2 8GB

Overall score
star star star star star
Samsung M378A1G44AB0-CWE 8GB

Samsung M378A1G44AB0-CWE 8GB

Differences Specifications Comments

Differences

Micron Technology 16KTF1G64HZ-1G9E2 8GB Reasons to consider
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 38
    Around 34% lower latency
  • Faster write speed, GB/s
    11.3 left arrow 10.9
    Average value in the tests
Samsung M378A1G44AB0-CWE 8GB Reasons to consider
Samsung M378A1G44AB0-CWE 8GB
Report a bug
  • Faster reading speed, GB/s
    16.5 left arrow 15.4
    Average value in the tests
  • Higher memory bandwidth, mbps
    25600 left arrow 14900
    Around 1.72 higher bandwidth

Specifications

Complete list of technical specifications
Micron Technology 16KTF1G64HZ-1G9E2 8GB
Samsung M378A1G44AB0-CWE 8GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR4
  • Latency in PassMark, ns
    25 left arrow 38
  • Read speed, GB/s
    15.4 left arrow 16.5
  • Write speed, GB/s
    11.3 left arrow 10.9
  • Memory bandwidth, mbps
    14900 left arrow 25600
Other
  • Description
    PC3-14900, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 13 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
  • Timings / Clock speed
    9-10-9-28 / 1866 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • Ranking PassMark (The more the better)
    2696 left arrow 2829

Micron Technology 16KTF1G64HZ-1G9E2 8GB RAM comparisons

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Samsung M378A1G44AB0-CWE 8GB RAM comparisons

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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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