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Samsung M378B5173EB0-YK0 4GB
SK Hynix HMT425U6AFR6C-PB 2GB
Compare
Samsung M378B5173EB0-YK0 4GB vs SK Hynix HMT425U6AFR6C-PB 2GB
Overall score
Samsung M378B5173EB0-YK0 4GB
Overall score
SK Hynix HMT425U6AFR6C-PB 2GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5173EB0-YK0 4GB
Report a bug
Faster reading speed, GB/s
14.1
13.9
Average value in the tests
Reasons to consider
SK Hynix HMT425U6AFR6C-PB 2GB
Report a bug
Below the latency in the PassMark tests, ns
40
41
Around -3% lower latency
Faster write speed, GB/s
8.6
8.2
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M378B5173EB0-YK0 4GB
SK Hynix HMT425U6AFR6C-PB 2GB
Main characteristics
Memory type
DDR3
DDR3
Latency in PassMark, ns
41
40
Read speed, GB/s
14.1
13.9
Write speed, GB/s
8.2
8.6
Memory bandwidth, mbps
12800
12800
Other
Description
PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11
PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
Timings / Clock speed
9-9-9-24 / 1600 MHz
9-9-9-24 / 1600 MHz
Ranking PassMark (The more the better)
2240
2205
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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