RAM
DDR5
DDR4
DDR3
DDR2
About the site
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
About the site
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Compare
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Overall score
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Overall score
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Differences
Specifications
Comments
Differences
Reasons to consider
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Report a bug
Reasons to consider
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Report a bug
Below the latency in the PassMark tests, ns
31
96
Around -210% lower latency
Faster reading speed, GB/s
20.5
2
Average value in the tests
Faster write speed, GB/s
15.5
1,336.0
Average value in the tests
Higher memory bandwidth, mbps
25600
6400
Around 4 higher bandwidth
Specifications
Complete list of technical specifications
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Main characteristics
Memory type
DDR2
DDR4
Latency in PassMark, ns
96
31
Read speed, GB/s
2,725.2
20.5
Write speed, GB/s
1,336.0
15.5
Memory bandwidth, mbps
6400
25600
Other
Description
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Timings / Clock speed
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
Ranking PassMark (The more the better)
438
3649
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM comparisons
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB RAM comparisons
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
Latest comparisons
Hexon Technology Pte Ltd HEXON 1GB
Kingston HX426C16FB2/8-SP 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Micron Technology 18ASF2G72AZ-2G1A1 16GB
Kingston 9905471-071.A00LF 8GB
Crucial Technology B|B8G4D30BET4K.C8FD 8GB
Samsung M471B5273CH0-CH9 4GB
Kingston XRGM6C-MIB 16GB
Samsung M471B1G73BH0-YK0 8GB
Samsung M471B5173BH0-YK0 4GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-4800C18-8GTRG 8GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston KF3600C18D4/32GX 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C14-16GTZSW 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905670-012.A00G 8GB
Team Group Inc. Vulcan-1600 4GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
Corsair VS1GB800D2 1GB
G Skill Intl F4-3200C15-16GVR 16GB
G Skill Intl F3-2666C12-8GTXD 8GB
G Skill Intl F4-3600C19-8GSXF 8GB
PNY Electronics PNY 2GB
Corsair CMW32GX4M4A2666C16 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT16G4DFRA266.C16FP 16GB
Report a bug
×
Bug description
Source link