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Kingston SNY1333D3S9DR8/2G 2GB
PNY Electronics 2GBBEAUDCBA 2GB

Kingston SNY1333D3S9DR8/2G 2GB vs PNY Electronics 2GBBEAUDCBA 2GB

总分
star star star star star
Kingston SNY1333D3S9DR8/2G 2GB

Kingston SNY1333D3S9DR8/2G 2GB

总分
star star star star star
PNY Electronics 2GBBEAUDCBA 2GB

PNY Electronics 2GBBEAUDCBA 2GB

差异 规格 评论

差异

Kingston SNY1333D3S9DR8/2G 2GB 需要考虑的原因
Kingston SNY1333D3S9DR8/2G 2GB
报告一个错误
PNY Electronics 2GBBEAUDCBA 2GB 需要考虑的原因
PNY Electronics 2GBBEAUDCBA 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    69 left arrow 121
    左右 -75% 更低的延时
  • 更快的读取速度，GB/s
    6.3 left arrow 2.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    4.8 left arrow 2.2
    测试中的平均数值

规格

完整的技术规格清单
Kingston SNY1333D3S9DR8/2G 2GB
PNY Electronics 2GBBEAUDCBA 2GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    121 left arrow 69
  • 读取速度，GB/s
    2.5 left arrow 6.3
  • 写入速度，GB/s
    2.2 left arrow 4.8
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 6 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    425 left arrow 1148

Kingston SNY1333D3S9DR8/2G 2GB RAM的比较

Kingston ACR256X64D3S1333C9 2GB
Samsung M471B5273DH0-CK0 4GB

PNY Electronics 2GBBEAUDCBA 2GB RAM的比较

PNY Electronics 4GBH2X02E99927-16 4GB
Nanya Technology NT256T64UH4B0FY-37 256MB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Dust Leopard DDR4-2400 CL17 8GB 8GB
Dust Leopard DDR4-2400 CL17 8GB 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Corsair CMD16GX4M4B3300C16 4GB
Corsair CMD16GX4M4B3300C16 4GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Kingston 9905678-027.A00G 8GB
Kingston 9905678-027.A00G 8GB
内存RAM
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F2-5300CL4-1GBSA 1GB
G Skill Intl F4-3600C16-32GVK 32GB
G Skill Intl F4-3600C16-32GVK 32GB
内存RAM
Kingston SNY1333D3S9DR8/2G 2GB
Kingston SNY1333D3S9DR8/2G 2GB
PNY Electronics 2GBBEAUDCBA 2GB
PNY Electronics 2GBBEAUDCBA 2GB
内存RAM
G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Panram International Corporation W4U2400PS-4G 4GB
Panram International Corporation W4U2400PS-4G 4GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
Crucial Technology BL32G32C16U4BL.M16FB 32GB
Crucial Technology BL32G32C16U4BL.M16FB 32GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Samsung M393A1K43BB0-CRC 8GB
Samsung M393A1K43BB0-CRC 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Kingston 9965589-035.D00G 16GB
Kingston 9965589-035.D00G 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16GB
Avexir Technologies Corporation DDR4-2400 CL16 16GB 16G
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Crucial Technology BLS4G4D26BFSC.8FB 4GB
Crucial Technology BLS4G4D26BFSC.8FB 4GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
G Skill Intl F4-3000C15-8GRK 8GB
G Skill Intl F4-3000C15-8GRK 8GB
内存RAM
G Skill Intl F3-2800C12-8GTXDG 8GB
G Skill Intl F3-2800C12-8GTXDG 8GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
Micron Technology 18ASF1G72PZ-2G1AV 8GB
内存RAM
ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
Corsair CMV4GX4M1A2666C18 4GB
Corsair CMV4GX4M1A2666C18 4GB
内存RAM