Micron Technology 16HTF12864HY-667G1 1GB vs Nanya Technology NT1GT64U8HB0BN-3C 1GB

总分

Micron Technology 16HTF12864HY-667G1 1GB

Micron Technology 16HTF12864HY-667G1 1GB

总分

Nanya Technology NT1GT64U8HB0BN-3C 1GB

Nanya Technology NT1GT64U8HB0BN-3C 1GB

差异规格评论

差异

Micron Technology 16HTF12864HY-667G1 1GB

需要考虑的原因
Micron Technology 16HTF12864HY-667G1 1GB

报告一个错误

Nanya Technology NT1GT64U8HB0BN-3C 1GB

需要考虑的原因
Nanya Technology NT1GT64U8HB0BN-3C 1GB

报告一个错误

低于PassMark测试中的延时，ns

67 74

左右 -10% 更低的延时
更快的读取速度，GB/s

3 2

测试中的平均数值
更快的写入速度，GB/s

1,338.6 1,261.3

测试中的平均数值

规格

完整的技术规格清单

Micron Technology 16HTF12864HY-667G1 1GB

Nanya Technology NT1GT64U8HB0BN-3C 1GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

74 67
读取速度，GB/s

2,818.5 3,206.2
写入速度，GB/s

1,261.3 1,338.6
内存带宽，mbps

5300 5300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

5-5-5-15 / 667 MHz 5-5-5-15 / 667 MHz
排名PassMark (越多越好)

378 447

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK32GX4M2A2666C16 16GB

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Micron Technology 16HTF12864HY-667G1 1GB

Micron Technology 16HTF12864HY-667G1 1GB

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Kllisre KRE-D3U1600M/8G 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

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SK Hynix HMA82GS6JJR8N-VK 16GB

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SK Hynix HMA81GS6JJR8N-VK 8GB

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Samsung M471B5273DH0-CK0 4GB

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Kingston 9905622-075.A00G 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Kingston 8ATF1G64AZ-2G3A141 8GB

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Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Crucial Technology CT16G4SFD8213.C16FAD 16GB

Samsung M393B1G70BH0-YK0 8GB

Samsung M393B1G70BH0-YK0 8GB

Corsair CMWX8GD3200C16W4 8GB

Corsair CMWX8GD3200C16W4 8GB