Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-3200C16-8GRS 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-3200C16-8GRS 8GB

G Skill Intl F4-3200C16-8GRS 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 17.4

测试中的平均数值
更快的写入速度，GB/s

2,622.0 14.3

测试中的平均数值

G Skill Intl F4-3200C16-8GRS 8GB

需要考虑的原因
G Skill Intl F4-3200C16-8GRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 77

左右 -126% 更低的延时
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3200C16-8GRS 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 34
读取速度，GB/s

3,405.2 17.4
写入速度，GB/s

2,622.0 14.3
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

763 3138

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Team Group Inc. TEAMGROUP-UD4-2933 8GB

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SK Hynix HMT41GU7BFR8A-PB 8GB

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G Skill Intl F4-3200C16-16GSXWB 16GB

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Kingston KHX16LC9/8GX 8GB

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SK Hynix HMA82GS6CJR8N-V-V 16GB

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SK Hynix HMA81GS6MFR8N-UH 8GB

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Samsung M393B5170FH0-CH9 4GB

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takeMS International AG TMS2GB264D083805EV 2GB

takeMS International AG TMS2GB264D083805EV 2GB

Corsair CMT16GX4M2C3466C16 8GB

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Samsung M393B1K70CH0-YH9 8GB

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Crucial Technology CT8G4DFS824A.M8FR 8GB

Crucial Technology CT8G4DFS824A.M8FR 8GB

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V-Color Technology Inc. TL48G24S815RGB 8GB

V-Color Technology Inc. TL48G24S815RGB 8GB

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Kingston 9905711-035.A00G 8GB

Kingston 9905711-035.A00G 8GB