Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-4000C17-8GTZRB 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-4000C17-8GTZRB 8GB

G Skill Intl F4-4000C17-8GTZRB 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 21

测试中的平均数值
更快的写入速度，GB/s

2,622.0 19.4

测试中的平均数值

G Skill Intl F4-4000C17-8GTZRB 8GB

需要考虑的原因
G Skill Intl F4-4000C17-8GTZRB 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 77

左右 -208% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-4000C17-8GTZRB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 25
读取速度，GB/s

3,405.2 21.0
写入速度，GB/s

2,622.0 19.4
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 4129

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Micron Technology 36ASF2G72PZ-2G3B1 16GB

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Corsair CMY8GX3M2A2666C10 4GB

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Crucial Technology CT16G4SFD824A.M16FD 16GB

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Samsung M3 93T5750CZA-CE6 2GB

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G Skill Intl F4-4000C17-8GTZRB 8GB

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AMD R5316G1609U2K 8GB

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G Skill Intl F4-4000C19-4GTZ 4GB

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Samsung M393B2G70BH0-CH9 16GB

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Kingston 9905624-010.A00G 4GB

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Kingston ACR256X64D3S1333C9 2GB

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Corsair CMD8GX4M2B3466C18 4GB

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Gold Key Technology Co Ltd NMSO432F82-3200E 32GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

Crucial Technology CT8G4DFRA266.C8FN 8GB

Crucial Technology CT8G4DFRA266.C8FN 8GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Nanya Technology NT2GT64U8HD0BN-AD 2GB

Crucial Technology BLS8G4D26BFSCK.8FBD 8GB

Crucial Technology BLS8G4D26BFSCK.8FBD 8GB

SK Hynix HMT351S6CFR8C-PB 4GB

SK Hynix HMT351S6CFR8C-PB 4GB

Crucial Technology CT4G4DFS8213.C8FAR 4GB

Crucial Technology CT4G4DFS8213.C8FAR 4GB