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Samsung M378A5244CB0-CTD 4GB
Legend Silicon Corp. ] ] ] ]E6 ] ] ]00 8GB

Samsung M378A5244CB0-CTD 4GB vs Legend Silicon Corp. ] ] ] ]E6 ] ] ]00 8GB

总分
star star star star star
Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

总分
star star star star star
Legend Silicon Corp. ] ] ] ]E6 ] ] ]00 8GB

Legend Silicon Corp. ] ] ] ]E6 ] ] ]00 8GB

差异 规格 评论

差异

Samsung M378A5244CB0-CTD 4GB 需要考虑的原因
Samsung M378A5244CB0-CTD 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 12.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 9.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66% 更高的带宽
Legend Silicon Corp. ] ] ] ]E6 ] ] ]00 8GB 需要考虑的原因
Legend Silicon Corp. ] ] ] ]E6 ] ] ]00 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 36
    左右 -24% 更低的延时

规格

完整的技术规格清单
Samsung M378A5244CB0-CTD 4GB
Legend Silicon Corp. ] ] ] ]E6 ] ] ]00 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR3
  • PassMark中的延时，ns
    36 left arrow 29
  • 读取速度，GB/s
    15.8 left arrow 12.8
  • 写入速度，GB/s
    11.8 left arrow 9.2
  • 内存带宽，mbps
    21300 left arrow 12800
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 left arrow PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 9-9-9-24 / 1600 MHz
  • 排名PassMark (越多越好)
    2497 left arrow 2315

Samsung M378A5244CB0-CTD 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB

Legend Silicon Corp. ] ] ] ]E6 ] ] ]00 8GB RAM的比较

Samsung M471A1K43BB1-CRC 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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