Samsung M4 70T2864QZ3-CE6 1GB vs Ramaxel Technology RMN2230MH48D8F-800 2GB

总分

Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

总分

Ramaxel Technology RMN2230MH48D8F-800 2GB

Ramaxel Technology RMN2230MH48D8F-800 2GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 3

测试中的平均数值
更快的写入速度，GB/s

1,574.4 1,539.4

测试中的平均数值

Ramaxel Technology RMN2230MH48D8F-800 2GB

需要考虑的原因
Ramaxel Technology RMN2230MH48D8F-800 2GB

报告一个错误

低于PassMark测试中的延时，ns

60 65

左右 -8% 更低的延时
更高的内存带宽，mbps

6400 5300

左右 1.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CE6 1GB

Ramaxel Technology RMN2230MH48D8F-800 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

65 60
读取速度，GB/s

3,858.9 3,720.6
写入速度，GB/s

1,574.4 1,539.4
内存带宽，mbps

5300 6400

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 6
时序/时钟速度

5-5-5-15 / 667 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

607 555

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung 1600 CL10 Series 8GB

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Crucial Technology BLS8G4S240FSD.16FBD 8GB

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Kingston X6TCK6-MIE 32GB

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Crucial Technology CT16G4SFD824A.M16FD1 16GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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Crucial Technology BLS8G4D240FSA.16FAD 8GB

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Kingston 9905403-444.A00LF 4GB

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SK Hynix HMA82GR8AMR4N-TF 16GB

SK Hynix HMA82GR8AMR4N-TF 16GB

SK Hynix HMT325S6CFR8C-H9 2GB

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Corsair CMK32GX4M4A2400C14 8GB

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G Skill Intl F4-2666C18-8GTZR 8GB

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