Samsung M378B5173EB0-YK0 4GB
SK Hynix HMT425U6AFR6C-PB 2GB

Samsung M378B5173EB0-YK0 4GB vs SK Hynix HMT425U6AFR6C-PB 2GB

Overall score
star star star star star
Samsung M378B5173EB0-YK0 4GB

Samsung M378B5173EB0-YK0 4GB

Overall score
star star star star star
SK Hynix HMT425U6AFR6C-PB 2GB

SK Hynix HMT425U6AFR6C-PB 2GB

Differences

  • Faster reading speed, GB/s
    14.1 left arrow 13.9
    Average value in the tests
  • Below the latency in the PassMark tests, ns
    40 left arrow 41
    Around -3% lower latency
  • Faster write speed, GB/s
    8.6 left arrow 8.2
    Average value in the tests

Specifications

Complete list of technical specifications
Samsung M378B5173EB0-YK0 4GB
SK Hynix HMT425U6AFR6C-PB 2GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    41 left arrow 40
  • Read speed, GB/s
    14.1 left arrow 13.9
  • Write speed, GB/s
    8.2 left arrow 8.6
  • Memory bandwidth, mbps
    12800 left arrow 12800
Other
  • Description
    PC3-12800, 1.5V, 1.35V , CAS Supported: 6 7 8 9 10 11 left arrow PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11
  • Timings / Clock speed
    9-9-9-24 / 1600 MHz left arrow 9-9-9-24 / 1600 MHz
  • Ranking PassMark (The more the better)
    2240 left arrow 2205
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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