RAM comparison Samsung M378B5773CH0-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HYMP112U64CP8-S5 1GB

Samsung M378B5773CH0-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HYMP112U64CP8-S5 1GB

Overall score

Samsung M378B5773CH0-CH9 2GB

Overall score

Differences Specifications Comments

Reasons to consider
Samsung M378B5773CH0-CH9 2GB

Below the latency in the PassMark tests, ns

39 59

Around 34% lower latency
Faster write speed, GB/s

7.4 1,702.8

Average value in the tests
Higher memory bandwidth, mbps

10600 6400

Around 1.66% higher bandwidth

Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP112U64CP8-S5 1GB

Complete list of technical specifications

Samsung M378B5773CH0-CH9 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP112U64CP8-S5 1GB

Main characteristics

Other

Description

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
Timings / Clock speed

7-7-7-20 / 1333 MHz 5-5-5-15 / 800 MHz
Ranking PassMark (The more the better)

1770 563

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns