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Samsung M378B5773CH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP112U64CP8-S5 1GB
Compare
Samsung M378B5773CH0-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HYMP112U64CP8-S5 1GB
Overall score
Samsung M378B5773CH0-CH9 2GB
Overall score
Hynix Semiconductor (Hyundai Electronics) HYMP112U64CP8-S5 1GB
Differences
Specifications
Comments
Differences
Reasons to consider
Samsung M378B5773CH0-CH9 2GB
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Below the latency in the PassMark tests, ns
39
59
Around 34% lower latency
Faster write speed, GB/s
7.4
1,702.8
Average value in the tests
Higher memory bandwidth, mbps
10600
6400
Around 1.66% higher bandwidth
Reasons to consider
Hynix Semiconductor (Hyundai Electronics) HYMP112U64CP8-S5 1GB
Report a bug
Faster reading speed, GB/s
3
12.8
Average value in the tests
Specifications
Complete list of technical specifications
Samsung M378B5773CH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP112U64CP8-S5 1GB
Main characteristics
Memory type
DDR3
DDR2
Latency in PassMark, ns
39
59
Read speed, GB/s
12.8
3,560.5
Write speed, GB/s
7.4
1,702.8
Memory bandwidth, mbps
10600
6400
Other
Description
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
Timings / Clock speed
7-7-7-20 / 1333 MHz
5-5-5-15 / 800 MHz
Ranking PassMark (The more the better)
1770
563
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
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