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Samsung M378B5773CH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP112U64CP8-S5 1GB

Samsung M378B5773CH0-CH9 2GB vs Hynix Semiconductor (Hyundai Electronics) HYMP112U64CP8-S5 1GB

总分
star star star star star
Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HYMP112U64CP8-S5 1GB

Hynix Semiconductor (Hyundai Electronics) HYMP112U64CP8-S5 1GB

差异 规格 评论

差异

Samsung M378B5773CH0-CH9 2GB 需要考虑的原因
Samsung M378B5773CH0-CH9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 59
    左右 34% 更低的延时
  • 更快的写入速度，GB/s
    7.4 left arrow 1,702.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    10600 left arrow 6400
    左右 1.66% 更高的带宽
Hynix Semiconductor (Hyundai Electronics) HYMP112U64CP8-S5 1GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HYMP112U64CP8-S5 1GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 12.8
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378B5773CH0-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP112U64CP8-S5 1GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR2
  • PassMark中的延时，ns
    39 left arrow 59
  • 读取速度，GB/s
    12.8 left arrow 3,560.5
  • 写入速度，GB/s
    7.4 left arrow 1,702.8
  • 内存带宽，mbps
    10600 left arrow 6400
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 5-5-5-15 / 800 MHz
  • 排名PassMark (越多越好)
    1770 left arrow 563

Samsung M378B5773CH0-CH9 2GB RAM的比较

Kingston 99U5458-001.A00LF 2GB
Wilk Elektronik S.A. GR3200D464L22/16G 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP112U64CP8-S5 1GB RAM的比较

Kingston XN205T-MIE 16GB
Kingston KF3200C20S4/16G 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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