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ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Samsung M323R2GA3BB0-CQKOD 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB vs Samsung M323R2GA3BB0-CQKOD 16GB

Overall score
star star star star star
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Overall score
star star star star star
Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

Differences Specifications Comments

Differences

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB Reasons to consider
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Report a bug
  • Faster reading speed, GB/s
    21.4 left arrow 13.4
    Average value in the tests
  • Faster write speed, GB/s
    14.3 left arrow 12.1
    Average value in the tests
Samsung M323R2GA3BB0-CQKOD 16GB Reasons to consider
Samsung M323R2GA3BB0-CQKOD 16GB
Report a bug
  • Below the latency in the PassMark tests, ns
    25 left arrow 37
    Around -48% lower latency

Specifications

Complete list of technical specifications
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR5
  • Latency in PassMark, ns
    37 left arrow 25
  • Read speed, GB/s
    21.4 left arrow 13.4
  • Write speed, GB/s
    14.3 left arrow 12.1
  • Memory bandwidth, mbps
    19200 left arrow 19200
Other
  • Description
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 left arrow PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
  • Timings / Clock speed
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow no data / 2400 MHz
  • Ranking PassMark (The more the better)
    3448 left arrow 3419

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB RAM comparisons

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Samsung M323R2GA3BB0-CQKOD 16GB RAM comparisons

Micron Technology 36ASF2G72PZ-2G1A2 16GB
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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