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Micron Technology 4ATF51264HZ-2G6E1 4GB
Samsung M471A5244CB0-CTD 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB vs Samsung M471A5244CB0-CTD 4GB

Overall score
star star star star star
Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

Overall score
star star star star star
Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

Differences Specifications Comments

Differences

Micron Technology 4ATF51264HZ-2G6E1 4GB Reasons to consider
Micron Technology 4ATF51264HZ-2G6E1 4GB
Report a bug
  • Below the latency in the PassMark tests, ns
    38 left arrow 39
    Around 3% lower latency
Samsung M471A5244CB0-CTD 4GB Reasons to consider
Samsung M471A5244CB0-CTD 4GB
Report a bug
  • Faster reading speed, GB/s
    15.5 left arrow 14.2
    Average value in the tests
  • Faster write speed, GB/s
    11.5 left arrow 10.3
    Average value in the tests

Specifications

Complete list of technical specifications
Micron Technology 4ATF51264HZ-2G6E1 4GB
Samsung M471A5244CB0-CTD 4GB
Main characteristics
  • Memory type
    DDR4 left arrow DDR4
  • Latency in PassMark, ns
    38 left arrow 39
  • Read speed, GB/s
    14.2 left arrow 15.5
  • Write speed, GB/s
    10.3 left arrow 11.5
  • Memory bandwidth, mbps
    21300 left arrow 21300
Other
  • Description
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • Timings / Clock speed
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • Ranking PassMark (The more the better)
    2148 left arrow 2264

Micron Technology 4ATF51264HZ-2G6E1 4GB RAM comparisons

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB

Samsung M471A5244CB0-CTD 4GB RAM comparisons

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

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