Micron Technology 4ATF51264HZ-2G6E1 4GB vs Samsung M471A5244CB0-CTD 4GB

总分

Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

总分

Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

差异规格评论

差异

Micron Technology 4ATF51264HZ-2G6E1 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G6E1 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 39

左右 3% 更低的延时

Samsung M471A5244CB0-CTD 4GB

需要考虑的原因
Samsung M471A5244CB0-CTD 4GB

报告一个错误

更快的读取速度，GB/s

15.5 14.2

测试中的平均数值
更快的写入速度，GB/s

11.5 10.3

测试中的平均数值

规格

完整的技术规格清单

Micron Technology 4ATF51264HZ-2G6E1 4GB

Samsung M471A5244CB0-CTD 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

38 39
读取速度，GB/s

14.2 15.5
写入速度，GB/s

10.3 11.5
内存带宽，mbps

21300 21300

Other

描述

PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2148 2264

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Mushkin 991586 2GB

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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Corsair CMW16GX4M2Z3600C18 8GB

Kingston 99P5474-014.A00LF 4GB

Kingston 99P5474-014.A00LF 4GB

Corsair CMR16GX4M2D3200C16 8GB

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Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

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Corsair CMK32GX4M4K4133C19 8GB

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Kingston 9965669-032.A00G 16GB

Kingston 9965669-032.A00G 16GB