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Micron Technology 4ATF51264HZ-2G6E1 4GB
Samsung M471A5244CB0-CTD 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB vs Samsung M471A5244CB0-CTD 4GB

总分
star star star star star
Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

总分
star star star star star
Samsung M471A5244CB0-CTD 4GB

Samsung M471A5244CB0-CTD 4GB

差异 规格 评论

差异

Micron Technology 4ATF51264HZ-2G6E1 4GB 需要考虑的原因
Micron Technology 4ATF51264HZ-2G6E1 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 39
    左右 3% 更低的延时
Samsung M471A5244CB0-CTD 4GB 需要考虑的原因
Samsung M471A5244CB0-CTD 4GB
报告一个错误
  • 更快的读取速度，GB/s
    15.5 left arrow 14.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.5 left arrow 10.3
    测试中的平均数值

规格

完整的技术规格清单
Micron Technology 4ATF51264HZ-2G6E1 4GB
Samsung M471A5244CB0-CTD 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    38 left arrow 39
  • 读取速度，GB/s
    14.2 left arrow 15.5
  • 写入速度，GB/s
    10.3 left arrow 11.5
  • 内存带宽，mbps
    21300 left arrow 21300
Other
  • 描述
    PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2148 left arrow 2264

Micron Technology 4ATF51264HZ-2G6E1 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology CT51264BD1339.M16F 4GB

Samsung M471A5244CB0-CTD 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9965525-140.A00LF 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Samsung M378A2K43DB1-CTD 16GB
Samsung M378A2K43DB1-CTD 16GB
内存RAM
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内存RAM
Micron Technology 4ATF51264HZ-2G6E1 4GB
Micron Technology 4ATF51264HZ-2G6E1 4GB
Samsung M471A5244CB0-CTD 4GB
Samsung M471A5244CB0-CTD 4GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
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Samsung M471B1G73QH0-YK0 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Micron Technology 8ATF2G64HZ-3G2E2 16GB
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Kingston 9965600-012.A02G 16GB
内存RAM